SQD50N06-09L_GE3
| Part No | SQD50N06-09L_GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET N-CH 60V 50A |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Availability:
17362
Pricing
| Quantity | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 5.5545 | |
| 10 | 5.4434 | |
| 100 | 5.2768 | |
| 1000 | 5.1101 | |
| 10000 | 4.888 |
Specification
Vgs(th) (Max) @ Id2.5V @ 250µA
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageTO-252, (D-Pak)
SeriesTrenchFET®
Rds On (Max) @ Id, Vgs9 mOhm @ 20A, 10V
Power Dissipation (Max)136W (Tc)
PackagingCut Tape (CT)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Other NamesSQD50N06-09L_GE3CT
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds3065pF @ 25V
Gate Charge (Qg) (Max) @ Vgs72nC @ 10V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Drain to Source Voltage (Vdss)60V
Detailed DescriptionN-Channel 60V 50A (Tc) 136W (Tc) Surface Mount TO-252, (D-Pak)
Current - Continuous Drain (Id) @ 25°C50A (Tc)
