SIS890DN-T1-GE3
| Part No | SIS890DN-T1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET N-CH 100V 30A 1212-8 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Availability:
19006
Pricing
| Quantity | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.107 | |
| 10 | 1.0849 | |
| 100 | 1.0516 | |
| 1000 | 1.0184 | |
| 10000 | 0.9742 |
Specification
RoHSCompliant
MountSurface Mount
Width3.4 mm
Height1.12 mm
Length3.4 mm
Fall Time8 ns
Lead FreeLead Free
PackagingDigi-Reel®
Rise Time10 ns
REACH SVHCUnknown
Rds On Max23.5 mΩ
Resistance23.5 MΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Number of Pins8
Input Capacitance802 pF
Power Dissipation3.7 W
Threshold Voltage1.5 V
Number of Channels1
Number of Elements1
Turn-On Delay Time9 ns
Radiation HardeningNo
Turn-Off Delay Time16 ns
Max Power Dissipation52 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance19.5 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)8.8 A
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)100 V
Drain to Source Breakdown Voltage100 V
