SIA413DJ-T1-GE3
| Part No | SIA413DJ-T1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET P-CH 12V 12A SC70-6 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Availability:
22878
Pricing
| Quantity | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.981 | |
| 10 | 0.9614 | |
| 100 | 0.932 | |
| 1000 | 0.9025 | |
| 10000 | 0.8633 |
Specification
RoHSCompliant
MountSurface Mount
Width2.05 mm
Height750 µm
Length2.05 mm
Fall Time40 ns
Lead FreeLead Free
Rise Time40 ns
REACH SVHCUnknown
Rds On Max29 mΩ
Resistance29 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Nominal Vgs-1 V
Case/PackageSC
Number of Pins6
Contact PlatingTin
Input Capacitance1.8 nF
Power Dissipation3.5 W
Threshold Voltage-1 V
Number of Channels1
Number of Elements1
Turn-On Delay Time20 ns
Radiation HardeningNo
Turn-Off Delay Time70 ns
Element ConfigurationSingle
Max Power Dissipation19 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance29 mΩ
Gate to Source Voltage (Vgs)8 V
Continuous Drain Current (ID)10 A
Drain to Source Voltage (Vdss)12 V
Drain to Source Breakdown Voltage-12 V
