SI7682DP-T1-E3
| Part No | SI7682DP-T1-E3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET N-CH 30V 20A PPAK SO-8 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Specification
RoHSCompliant
MountSurface Mount
Fall Time10 ns
Lead FreeLead Free
Rise Time82 ns
Rds On Max9 mΩ
Resistance9 mΩ
Number of Pins8
Input Capacitance1.595 nF
Power Dissipation5 W
Number of Elements1
Turn-On Delay Time18 ns
Radiation HardeningNo
Turn-Off Delay Time18 ns
Element ConfigurationSingle
Max Power Dissipation27.5 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance9 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)17.5 A
Drain to Source Voltage (Vdss)30 V
Drain to Source Breakdown Voltage30 V
