SI4447ADY-T1-GE3
| Part No | SI4447ADY-T1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET P-CH 40V 7.2A 8SOIC |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Availability:
18733
Pricing
| Quantity | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.5757 | |
| 10 | 0.5642 | |
| 100 | 0.5469 | |
| 1000 | 0.5296 | |
| 10000 | 0.5066 |
Specification
RoHSCompliant
MountSurface Mount
Height1.75 mm
Weight506.605978 mg
Fall Time9 ns
Lead FreeLead Free
PackagingCut Tape
Rise Time12 ns
REACH SVHCNo SVHC
Rds On Max45 mΩ
Schedule B8541290080
Case/PackageSOIC
Number of Pins8
Input Capacitance970 pF
Power Dissipation2.5 W
Threshold Voltage-1.2 V
Number of Channels1
Number of Elements2
Turn-On Delay Time7 ns
Radiation HardeningNo
Turn-Off Delay Time30 ns
Element ConfigurationSingle
Max Power Dissipation4.2 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance36 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)-5.5 A
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)-40 V
Drain to Source Breakdown Voltage-40 V
