SI3417DV-T1-GE3
| Part No | SI3417DV-T1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET P-CH 30V 8A TSOP-6 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Availability:
16019
Pricing
| Quantity | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.352 | |
| 10 | 0.345 | |
| 100 | 0.3344 | |
| 1000 | 0.3238 | |
| 10000 | 0.3098 |
Specification
RoHSCompliant
MountSurface Mount
Weight19.986414 mg
Fall Time16 ns
Rise Time35 ns
Rds On Max25.2 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Case/PackageTSOP
Number of Pins6
Input Capacitance1.35 nF
Power Dissipation2 W
Number of Channels1
Number of Elements1
Turn-On Delay Time42 ns
Turn-Off Delay Time40 ns
Element ConfigurationSingle
Max Power Dissipation4.2 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance30 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)8 A
Drain to Source Voltage (Vdss)30 V
Drain to Source Breakdown Voltage-30 V
