SI2371EDS-T1-GE3
| Part No | SI2371EDS-T1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET P-CH 30V 4.8A SOT-23 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Availability:
32976
Pricing
| Quantity | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.4551 | |
| 10 | 0.446 | |
| 100 | 0.4323 | |
| 1000 | 0.4187 | |
| 10000 | 0.4005 |
Specification
RoHSCompliant
MountSurface Mount
Height1.12 mm
Fall Time62 ns
Lead FreeLead Free
PackagingDigi-Reel®
Rise Time65 ns
REACH SVHCNo SVHC
Rds On Max45 mΩ
Resistance45 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Case/PackageSOT-23
Number of Pins3
Power Dissipation1 W
Threshold Voltage-1.5 V
Number of Channels1
Number of Elements1
Turn-On Delay Time7 ns
Radiation HardeningNo
Turn-Off Delay Time47 ns
Element ConfigurationSingle
Max Power Dissipation1.7 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance37 mΩ
Gate to Source Voltage (Vgs)12 V
Continuous Drain Current (ID)-4.8 A
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)-30 V
Drain to Source Breakdown Voltage-30 V
