SI2347DS-T1-GE3
| Part No | SI2347DS-T1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET P-CH 30V 5A SOT-23 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Availability:
20087
Pricing
| Quantity | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.4551 | |
| 10 | 0.446 | |
| 100 | 0.4323 | |
| 1000 | 0.4187 | |
| 10000 | 0.4005 |
Specification
RoHSCompliant
MountSurface Mount
Height1.12 mm
Fall Time9 ns
Lead FreeLead Free
Rise Time6 ns
REACH SVHCNo SVHC
Rds On Max42 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Case/PackageSOT-23
Number of Pins3
Contact PlatingTin
Input Capacitance705 pF
Power Dissipation1.7 W
Threshold Voltage-2.5 V
Number of Channels1
Number of Elements1
Radiation HardeningNo
Turn-Off Delay Time19 ns
Element ConfigurationSingle
Max Power Dissipation1.7 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance68 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)3.8 A
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)-30 V
Drain to Source Breakdown Voltage-30 V
