SI2343DS-T1-E3
| Part No | SI2343DS-T1-E3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET P-CH 30V 3.1A SOT23-3 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Availability:
47933
Pricing
| Quantity | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.5248 | |
| 10 | 0.5143 | |
| 100 | 0.4986 | |
| 1000 | 0.4828 | |
| 10000 | 0.4618 |
Specification
RoHSCompliant
MountSurface Mount
Width1.4 mm
Height1.02 mm
Length3.04 mm
Weight1.437803 g
Fall Time15 ns
Lead FreeLead Free
Rise Time15 ns
REACH SVHCUnknown
Rds On Max53 mΩ
Resistance53 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Nominal Vgs-1 V
Case/PackageSOT-23
Number of Pins3
Contact PlatingTin
Input Capacitance540 pF
Power Dissipation750 mW
Threshold Voltage-3 V
Number of Channels1
Number of Elements1
Turn-On Delay Time10 ns
Radiation HardeningNo
Turn-Off Delay Time31 ns
Element ConfigurationSingle
Max Power Dissipation750 mW
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance43 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)-3.1 A
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)-30 V
Drain to Source Breakdown Voltage-30 V
