SI2309CDS-T1-GE3
| Part No | SI2309CDS-T1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET P-CH 60V 1.6A SOT23-3 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Availability:
40662
Pricing
| Quantity | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.5724 | |
| 10 | 0.561 | |
| 100 | 0.5438 | |
| 1000 | 0.5266 | |
| 10000 | 0.5037 |
Specification
RoHSCompliant
MountSurface Mount
Width1.4 mm
Height1.02 mm
Length3.04 mm
Weight1.437803 g
Current12 A
Voltage60 V
Fall Time35 ns
Lead FreeLead Free
PackagingCut Tape
Rise Time35 ns
REACH SVHCNo SVHC
Rds On Max345 mΩ
Resistance345 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Case/PackageSOT-23-3
Number of Pins3
Input Capacitance210 pF
Power Dissipation1.7 W
Threshold Voltage-1 V
Number of Channels1
Number of Elements1
Turn-On Delay Time40 ns
Radiation HardeningNo
Turn-Off Delay Time15 ns
Element ConfigurationSingle
Max Power Dissipation1.7 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance345 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)1.2 A
Drain to Source Voltage (Vdss)60 V
Drain to Source Breakdown Voltage-60 V
